Title :
Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
GaAs bombarded with arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz
Keywords :
III-V semiconductors; arsenic; gallium arsenide; ion implantation; microwave photonics; millimetre wave devices; photoconducting switches; semiconductor doping; 500 MHz; As-implanted GaAs; GaAs:As; GaAs:As photoconductive switches; implantation energies; millimeter wave applications; multi-energy ion-implanted switches; multiple dosages; picosecond response; ultrafast applications; ultrawide bandwidth; Charge carrier lifetime; Gallium arsenide; Millimeter wave technology; Molecular beam epitaxial growth; Optical switches; Personal communication networks; Photoconducting devices; Photoconductivity; Tail; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.866136
