Title :
H2O-TEOS plasma-CVD realizing dielectrics having a smooth surface
Author :
Hatanaka, M. ; Mizushima, Y. ; Hataishi, O. ; Furumura, Y.
Author_Institution :
Semicond. Process Lab., Fujitsu VLSI Ltd., Mie, Japan
Abstract :
The authors have grown planarized dielectrics by plasma-enhanced chemical vapor deposition from an H2O and Si(OC2H 5)4 (tetraethylorthosilicate: TEOS) gas system (H 2O-TEOS PLASMA-CVD). The grown dielectrics have smooth surfaces similar to spin-on-glass (SOG) films, and fill grooves down to 0.2 μm in width. This paper reports characteristics and planarization mechanism of H2O-TEOS PLASMA-CVD dielectrics
Keywords :
VLSI; dielectric thin films; metallisation; plasma CVD; 0.2 micron; PECVD; TEOS; VLSI; characteristics; fill grooves; interlevel dielectric planarization; multilevel metallisation; planarization mechanism; planarized dielectrics; plasma-enhanced chemical vapor deposition; smooth surface dielectrics; tetraethylorthosilicate; Dielectrics; Electrodes; Inductors; Planarization; Plasma chemistry; Plasma properties; Plasma sources; Plasma temperature; Radio frequency; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153049
