Title :
Biased ECR CVD oxide deposition using TEOS and TMCTS
Author :
Pai, C.S. ; Miner, J.F. ; Foo, P.D.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The authors have studied oxide deposition in a biased ECR CVD reactor using TEOS (tetraethylorthosilicate) and TMCTS (tetramethylcyclotetrasiloxane) as Si sources. Oxide films with good material quality are deposited as long as O2/TEOS and O2 /TMCTS flow rate ratios are greater than 2 and 3 respectively. The deposition rate using TMCTS is about four times higher than using TEOS under similar condition. The step coverage of oxide is found to be excellent when additional RF bias is applied on the substrate during the deposition. They have demonstrated that trenches with high aspect ratios (>1.5) can be filled without voids
Keywords :
VLSI; dielectric thin films; metallisation; plasma CVD; plasma radiofrequency heating; silicon compounds; SiO2 deposition; TEOS; TMCTS; VLSI; additional RF bias; biased ECR CVD reactor; deposition rate; flow rate ratios; interlevel dielectrics; low temperature processing; multilevel metallisation; safety; step coverage of oxide; tetraethylorthosilicate; tetramethylcyclotetrasiloxane; trench filling capability; Atomic layer deposition; Dielectric substrates; Fault location; Filling; Inductors; Microwave generation; Safety; Semiconductor films; Temperature; Throughput;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153050
