Title :
A new low dielectric constant planarization dielectric
Author :
Rutherford, Nicole M. ; Baldwin, Teresa A. ; Gupta, Satish K.
Author_Institution :
Planarization & Diffusion Products Div., Allied-Signal Inc., Milpitas, CA, USA
Abstract :
A new methylsiloxane polymer has been synthesized for application as a spin-on dielectric in advanced IC fabrication. Films as thick as 3 microns have been fabricated on unpatterned silicon wafers and cured to 425°C without cracking. The films are characterized by low dielectric constant (3.1), low stress, and low shrinkage upon cure and also excellent thermo-oxidative stability. The plasma etch rates of these siloxane films in conventional fluorocarbon plasmas are similar to those of oxide films
Keywords :
VLSI; dielectric thin films; metallisation; polymers; 3 micron; 425 C; IC fabrication; SOG; ULSI; VLSI; fluorocarbon plasmas; interlevel dielectric; low dielectric constant; low permittivity; low shrinkage upon cure; low stress; methylsiloxane polymer; multilevel metallisation; planarization dielectric; plasma etch rates; siloxane films; spin-on dielectric; thermo-oxidative stability; Application specific integrated circuits; Dielectric constant; Fabrication; Integrated circuit synthesis; Planarization; Plasma applications; Plasma stability; Polymers; Semiconductor films; Silicon;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153052
