A new low dielectric constant planarization dielectric

Author

Rutherford, Nicole M. ; Baldwin, Teresa A. ; Gupta, Satish K.

Author_Institution

Planarization & Diffusion Products Div., Allied-Signal Inc., Milpitas, CA, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

448

Lastpage

450

Abstract

A new methylsiloxane polymer has been synthesized for application as a spin-on dielectric in advanced IC fabrication. Films as thick as 3 microns have been fabricated on unpatterned silicon wafers and cured to 425°C without cracking. The films are characterized by low dielectric constant (3.1), low stress, and low shrinkage upon cure and also excellent thermo-oxidative stability. The plasma etch rates of these siloxane films in conventional fluorocarbon plasmas are similar to those of oxide films

Keywords

VLSI; dielectric thin films; metallisation; polymers; 3 micron; 425 C; IC fabrication; SOG; ULSI; VLSI; fluorocarbon plasmas; interlevel dielectric; low dielectric constant; low permittivity; low shrinkage upon cure; low stress; methylsiloxane polymer; multilevel metallisation; planarization dielectric; plasma etch rates; siloxane films; spin-on dielectric; thermo-oxidative stability; Application specific integrated circuits; Dielectric constant; Fabrication; Integrated circuit synthesis; Planarization; Plasma applications; Plasma stability; Polymers; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153052

Filename

153052