DocumentCode
2382780
Title
Single-chip surface-micromachined integrated gyroscope with 50/spl deg//hour root Allan variance
Author
Geen, J.A. ; Sherman, S.J. ; Chang, J.F. ; Lewis, S.R.
Author_Institution
Analog Devices Inc, Cambridge, MA, USA
Volume
1
fYear
2002
fDate
7-7 Feb. 2002
Firstpage
426
Abstract
A MEMS surface-micromachined gyroscope integrated on a single 3/spl times/3 mm/sup 2/ chip with a 3 /spl mu/m BiCMOS process has 4 /spl mu/m-thick polysilicon structure, 5V 6 mA power supply, 0.05/spl deg///spl radic/s spot noise, 12.5 mV//spl deg//s, >30,000 g shock survival, and -55 to 85/spl deg/C operating range.
Keywords
BiCMOS integrated circuits; gyroscopes; micromachining; microsensors; -55 to 85 C; 3 micron; 5 V; 6 mA; Allan variance; BiCMOS process; MEMS gyroscope; Si; polysilicon structure; single chip; surface micromachining; Acceleration; Accelerometers; Capacitors; Electrodes; Force sensors; Gyroscopes; Oscillators; Resonance; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC. 2002 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7335-9
Type
conf
DOI
10.1109/ISSCC.2002.993114
Filename
993114
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