Title :
A study of outgassing from spin-on-glass films used for planarization
Author :
Kobayakawa, M. ; Arimatsu, A. ; Yokoyama, F. ; Hirashita, N. ; Ajioka, T.
Author_Institution :
Process Technol. Center, OKI Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
The outgassing from phosphorus doped spin-on-glass (SOG) film was investigated by thermal desorption spectroscopy (TDS). Water and hydrocarbon were found to be main outgassing species from SOG films. Water desorption from SOG films is classified into three components and two hydrocarbon desorption peaks are also observed. The results reveal that water desorption are related to P-OH and Si-OH components in SOG films. It is necessary to optimize cure condition and phosphorus concentration in SOG films for highly reliable multi-level interconnects
Keywords :
VLSI; desorption; dielectric materials; glass; metallisation; reliability; H2O desorption; P concentration; P2O5-SiO2; PSG films; SOG films; TDS; VLSI; cure condition; hydrocarbon desorption; multilevel metallisation; outgassing; outgassing species; planarization; reliable multi-level interconnects; spin-on-glass films; thermal desorption spectroscopy; water desorption; Degradation; Dielectrics; Hydrocarbons; Infrared heating; Infrared spectra; Mass spectroscopy; Planarization; Research and development; Temperature measurement; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153054
