Title :
High-speed MSM-HEMT and PIN-HEMT monolithic photoreceivers
Author :
Fay, P. ; Caneau, C. ; Adesida, I.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
The design, fabrication, and performance of monolithically integrated MSM-HEMT and PIN-HEMT photoreceivers are described. PIN-HEMT photoreceivers with 701 Ω of transimpedance over an 8.3 GHz bandwidth have been fabricated, and the sensitivity was measured and found to be -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 231 -1 pattern length PRBS at a BER of 10-9. Low-noise MSM-based photoreceivers have also designed and fabricated, and frequency response and sensitivity measurements have been performed, A comparison of PIN- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth, and the differences in performance are analyzed
Keywords :
HEMT integrated circuits; frequency response; high-speed integrated circuits; integrated circuit noise; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; p-i-n photodiodes; 10 to 12 Gbit/s; 8.3 GHz; BER; MSM-HEMT monolithic photoreceivers; OEIC; PIN-HEMT monolithic photoreceivers; fabrication; frequency response; high-speed monolithic photoreceivers; low-noise photoreceivers; sensitivity measurements; Bandwidth; Bit error rate; Fabrication; Frequency measurement; Frequency response; HEMTs; Integrated circuit interconnections; Length measurement; PIN photodiodes; Photodetectors;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.866238
