Title :
Analytical description of electric field profile in heterojunctions
Author :
Castro, Francisco ; Nabet, Bahram
Author_Institution :
Lucent Technol. Bell Labs., Lisle, IL, USA
Abstract :
We propose a model that describes the electric field profile as it extends into the GaAs layer of a modulation-doped AlGaAs-GaAs structure. This closed-form analytical expression is obtained from an accurate two-dimensional electron gas (2DEG) sheet density model and is particularly suitable for simulating the effects of absorption modulation on the spectral response of multilayer photodetectors. A significant improvement in model accuracy is achieved by introducing an exponential coefficient that provides a closer description of the electric field profile behavior near the heterointerface where field strengths are highest. Results are compared with device simulation programs
Keywords :
III-V semiconductors; aluminium compounds; carrier density; electric fields; gallium arsenide; photodetectors; semiconductor device models; semiconductor heterojunctions; two-dimensional electron gas; 2DEG sheet density model; AlGaAs-GaAs; GaAs layer; absorption modulation; closed-form analytical expression; electric field profile; exponential coefficient; heterojunctions; model accuracy; modulation-doped AlGaAs-GaAs structure; multilayer photodetectors; spectral response; two-dimensional electron gas; Absorption; Analytical models; Charge carrier density; Electrons; Epitaxial layers; Gallium arsenide; Heterojunctions; Nonhomogeneous media; Optical filters; Photodetectors;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.866240
