Title :
GaN based high electron mobility transistors for microwave and RF control applications
Author :
Drozdovski, Nikolai ; Caverly, Robert
Author_Institution :
Dept. of Electr. Comput. & Eng., Villanova Univ., PA, USA
Abstract :
Heterojunction field-effect transistors (HFETs) or high-electron mobility transistors (HEMTs) based on AlxGa1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in this application. It was experimentally established that the HFET resistance is low for voltages of +1.0 volts, and that the capacitive reactance increases for DC gate voltages below the threshold voltage of approximately -1.5 volts
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; equivalent circuits; gallium arsenide; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; semiconductor device models; wide band gap semiconductors; AlxGa1-xN/GaN devices; AlGaAs-GaN; DC gate voltages; GaN based FETs; HEMTs; HFET resistance; HFETs; RF control applications; capacitive reactance; control components; field-effect transistors; heterojunction FET; high electron mobility transistors; high-power control devices; linear operation model; microwave control applications; optimum operation parameters; optimum transistor geometry; phase shifters; switches; threshold voltage; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Microwave devices; Radio frequency; Solid modeling; Switches; Threshold voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.866242
