DocumentCode
2383619
Title
A design equation for the load resistors that ensure stability for potentially unstable transistors
Author
Garcia, Mikael ; Fager, Christian
Author_Institution
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
2
fYear
1999
fDate
1999
Firstpage
589
Abstract
This paper presents a mathematically compact design equation for use in resistive stabilization of potentially unstable transistors. The design equation relates the necessary load resistors directly to the device S-parameters and it can be used for either series or shunt loading. For demonstration purposes, the design equation is applied to on-wafer measured S-parameters of an LDMOS transistor and a SiC MESFET
Keywords
S-parameters; microwave transistors; power transistors; resistors; stability; LDMOS transistor; SiC; SiC MESFET; design equation; device S-parameters; load resistors; potentially unstable transistors; resistive stabilization; series loading; shunt loading; stability; Broadband amplifiers; Circuit stability; Circuit synthesis; Differential equations; Electrical resistance measurement; MESFETs; Resistors; Scattering parameters; Silicon carbide; Stability criteria;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location
Rio de Janeiro
Print_ISBN
0-7803-5807-4
Type
conf
DOI
10.1109/IMOC.1999.866250
Filename
866250
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