Title :
A novel low-frequency PIN diode
Author :
Drozdovskaia, Loudmila
Author_Institution :
MPEI, Moscow, Russia
Abstract :
This paper describes computer simulation results of a novel multilayer PIN diode suitable for the high-power low-frequency application. On the other hand the use of this diode in the microwave region allows one to decrease the DC reverse bias voltage. The novel diode is composed of p+ and n+ semiconductor layers separated by composite intrinsic region n-n-, forming a p+-n-n--n+ structure. It may be considered as a PIN diode
Keywords :
heavily doped semiconductors; p-i-n diodes; power semiconductor diodes; semiconductor device models; DC reverse bias voltage reduction; LF p-i-n diode; computer simulation; high-power LF application; highly doped layer; low-frequency PIN diode; multilayer PIN diode; p+-n-n--n+ structure; Capacitance; Charge carrier processes; Computer simulation; Doping profiles; Impedance; Nonhomogeneous media; Poisson equations; Radio frequency; Semiconductor diodes; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.866251
