Title :
Laser reflectometry applied to the in-situ etching control in an electron cyclotron resonance plasma system
Author :
Mestanza, S.N.M. ; Diniz, J.A. ; Frateschi, N.C.
Author_Institution :
UNICAMP, Campinas, Brazil
Abstract :
ECR BC13 etching of InGaP-GaAs-InGaAs quantum well laser structures was performed to produce vertical walls with good morphology. Laser reflectometry shows a reduced etching rate for p+-InGaP material. Etching thickness control within 200 Å is achieved for InGaP layers
Keywords :
cyclotron resonance; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; reflectometry; sputter etching; 200 A; ECR BC13 etching; InGaP layers; InGaP-GaAs-InGaAs; InGaP-GaAs-InGaAs quantum well laser structures; electron cyclotron resonance plasma system; etching thickness control; good morphology; in-situ etching control; laser reflectometry; p+-InGaP material; reduced etching rate; vertical walls; Cyclotrons; Electrons; Etching; Optical control; Plasma applications; Quantum well lasers; Reflectometry; Resonance; Semiconductor lasers; Substrates;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.866256
