Title :
Gas sensors on Ga2O3-In2O3 thin films
Author :
Kozlov, A.G. ; Krivozubov, O.V. ; Kurdukova, E.A. ; Lila, M.N.
Author_Institution :
Phys. Fac., Omsk State Univ., Omsk, Russia
Abstract :
Ga2O3-In2O3 thin films prepared by the magnetron sputtering from the Ga-In eutectic target and the subsequent thermal oxidation were considered. The effect of thermal oxidation conditions on the properties of the Ga2O3-In2O3 thin films was investigated. The temperature dependence of conductance of the Ga2O3-In2O3 thin films was studied at the range of 20-500°C. The effect of concentration of some gases (ethanol, acetone, and ammonia) on the resistance of the gas sensors made of Ga2O3-In2O3 thin films was investigated.
Keywords :
gallium compounds; gas sensors; indium compounds; sputtering; thin film sensors; Ga2O3-In2O3; acetone; ammonia; ethanol; gas sensors; magnetron sputtering; temperature 20 degC to 500 degC; thermal oxidation; thin films; Chemical sensors; Films; Gas detectors; Oxidation; Temperature dependence; Temperature sensors;
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222824
