Title :
Parallel operation of the emitter turn-off (ETO) thyristor
Author :
Zhou, Xigen ; Xu, Zhenxue ; Huang, Alex Q.
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The emitter turn-off (ETO) thyristor is a hybrid MOS-gated GTO thyristor, it has a positive temperature coefficient on-state resistance, which guarantees the thermal stability during parallel operation. By introducing unity gain turn-off in the ETO, the storage time is reduced by ten times compared with traditional GTO. This feature enables the dynamic current sharing of paralleled ETOs during device turn-off. Parallel operation of ETOs is tested, analyzed and the experimental results show that the dynamic current sharing is achieved even at high current levels.
Keywords :
electric resistance; power MOSFET; thermal stability; thyristors; ETO thyristor; dynamic current sharing; emitter turn-off thyristor; high current levels; parallel operation; positive temperature coefficient on-state resistance; storage time; thermal stability; unity gain turn-off; Electric resistance; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power electronics; Switches; Temperature distribution; Thermal engineering; Thermal resistance; Thyristors;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1042812
