Characterization of a new L-shaped MOSFET for future deca nano application

A novel device architecture called L-shaped MOSFET has been designed and fabricated. Bulk silicon wafer is used and less area is derived for the device at the same gate length when compared to the conventional MOSFET, thus the fabrication cost is significantly reduced for the future 3D IC applications. Based on the measurement, the new L-shaped MOSFET demonstrates the conventional DC properties properly and possesses different electrical performance when switching its source and drain biases. Simulation results were also performed to prove its novel characteristics when compared to the conventional MOSFET device.