Title :
A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer
Author :
Mejdoubi, A. ; Prenat, G. ; Dieny, B.
Author_Institution :
Spintec, Lab. of Spintronique et Technol. des Composants, UJF, Grenoble, France
Abstract :
Magnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability, high reliability and non-volatility. A macro-model of MTJ with precessional switching is presented in this paper. This model is based on Spin-Transfer Torque (STT) writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL).
Keywords :
CMOS integrated circuits; magnetic switching; magnetic tunnelling; magnetoelectronics; MTJ; current-induced magnetic switching; in-plane magnetized analyzing layer; in-plane magnetized free layer; magnetic tunnel junction devices; perpendicular polarizer; perpendicularly magnetized polarizing layer; precessional spin-transfer switching; spin-transfer torque writing approach; Integrated circuit modeling; Junctions; Magnetic switching; Magnetic tunneling; Magnetization; Resistance; Switches;
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222840
