Title :
Using capacitance methods for interface trap level density extraction in graphene field-effect devices
Author :
Zebrev, Gennady I. ; Melnik, Evgeny V. ; Batmanova, Daria K.
Author_Institution :
Dept. of Micro- & Nanoelectron., Nat. Res. Nucl. Univ. MEPHI, Moscow, Russia
Abstract :
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.
Keywords :
field effect devices; graphene; interface states; C; capacitance methods; capacitance-voltage measurements; graphene Fermi velocity extraction; graphene field-effect devices; interface trap extraction procedure; interface trap level density extraction; silicon field-effect structures; Capacitance measurement; Capacitance-voltage characteristics; Logic gates; Quantum capacitance; Silicon; Transconductance;
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222868
