Title :
Nature of thermoelectric anisotropy in semiconductors at the lower temperatures
Author :
Osipov, E.V. ; Aulas, A.
Author_Institution :
Semicond. Phys. Inst., Vilnius, Lithuania
Abstract :
It is found that, on the basis of anisotropic scattering theory for monovalley semiconductors and experimental data on electrical conductivity and Seebeck coefficients measured at lower temperatures on pure single crystals of ZnSb, it is possible to evaluate relaxation times and effective masses of charge carriers. Analytical expressions are obtained for TE anisotropy and components of the Seebeck coefficient tensor for such semiconductors at lower temperatures, in which phonon drag effects predominate. The method are illustrated on an example of p-type ZnSb single crystals of various purity
Keywords :
Seebeck effect; carrier relaxation time; effective mass; electrical conductivity; phonon drag; semiconductor materials; semiconductors; thermomagnetic effects; zinc compounds; Hall coefficient; Seebeck coefficients; ZnSb; anisotropic scattering theory; carrier relaxation times; charge carriers; effective masses; electrical conductivity; lower temperatures; monovalley semiconductor; p-type ZnSb single crystals; phonon drag effect; pure single crystals; thermoelectric anisotropy; transverse thermomagnetic effect; Anisotropic magnetoresistance; Charge measurement; Conductivity measurement; Crystals; Current measurement; Effective mass; Electric variables measurement; Scattering; Temperature measurement; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667641