A simulation study on thin SOI bipolar transistors with fully or partially depleted collector

Author

Ouyang, Qiqing ; Cai, Jia ; Ning, Talc ; Oldiges, Phil ; Johnson, Jeffery B.

Author_Institution

IBM Semicond. Res. & Dev. Center (SRDC), IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2002

fDate

2002

Firstpage

28

Lastpage

31

Abstract

Vertical npn BJTs on thin SOI with a partially or fully depleted collector are studied by 2-dimensional device simulations. It is found that compared to conventional bulk BJTs, the SOI BJTs have a reduced base-collector capacitance, a higher Early voltage and a higher breakdown voltage. A SOI BJT with a fully-depleted collector can achieve a higher f_max with a comparable current gain and f_T.

Keywords

bipolar transistors; capacitance; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 2D device simulations; Si-SiO; base-collector capacitance; breakdown voltage; current gain; fully depleted collector; partially depleted collector; thin SOI bipolar transistors; vertical npn BJTs; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; CMOS technology; Capacitance; Germanium silicon alloys; Microelectronics; Radio frequency; Research and development; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042880

Filename

1042880