Title :
A simulation study on thin SOI bipolar transistors with fully or partially depleted collector
Author :
Ouyang, Qiqing ; Cai, Jia ; Ning, Talc ; Oldiges, Phil ; Johnson, Jeffery B.
Author_Institution :
IBM Semicond. Res. & Dev. Center (SRDC), IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Vertical npn BJTs on thin SOI with a partially or fully depleted collector are studied by 2-dimensional device simulations. It is found that compared to conventional bulk BJTs, the SOI BJTs have a reduced base-collector capacitance, a higher Early voltage and a higher breakdown voltage. A SOI BJT with a fully-depleted collector can achieve a higher fmax with a comparable current gain and fT.
Keywords :
bipolar transistors; capacitance; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 2D device simulations; Si-SiO; base-collector capacitance; breakdown voltage; current gain; fully depleted collector; partially depleted collector; thin SOI bipolar transistors; vertical npn BJTs; BiCMOS integrated circuits; Bipolar transistors; Breakdown voltage; CMOS technology; Capacitance; Germanium silicon alloys; Microelectronics; Radio frequency; Research and development; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042880
