• DocumentCode
    2384974
  • Title

    A new "mixed-mode" base current degradation mechanism in bipolar transistors

  • Author

    Zhang, Gang ; Cressler, John D. ; Niu, Guofu ; Joseph, Alvin J.

  • Author_Institution
    Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    32
  • Lastpage
    35
  • Abstract
    A new "mixed-mode" base current degradation mechanism has been identified in bipolar transistors, and is compared with other known stress mechanisms. 2-D simulations are used to shed light on the physical origins of the phenomena.
  • Keywords
    heterojunction bipolar transistors; semiconductor device models; 2D simulations; HBT; bipolar transistors; mixed-mode base current degradation mechanism; simulation; stress mechanisms; Bipolar transistors; Computational modeling; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Physics computing; Silicon germanium; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042881
  • Filename
    1042881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2384974