Title :
A new "mixed-mode" base current degradation mechanism in bipolar transistors
Author :
Zhang, Gang ; Cressler, John D. ; Niu, Guofu ; Joseph, Alvin J.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
A new "mixed-mode" base current degradation mechanism has been identified in bipolar transistors, and is compared with other known stress mechanisms. 2-D simulations are used to shed light on the physical origins of the phenomena.
Keywords :
heterojunction bipolar transistors; semiconductor device models; 2D simulations; HBT; bipolar transistors; mixed-mode base current degradation mechanism; simulation; stress mechanisms; Bipolar transistors; Computational modeling; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Physics computing; Silicon germanium; Stress; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042881
