Title :
A direct-conversion receiver IC for WCDMA mobile systems
Author :
Reynolds, S. ; Floyd, B. ; Beukema, T. ; Zwick, T. ; Pfeiffer, U. ; Ainspan, H.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A prototype design of a 2.7 V, 14.5 mA SiGe direct-conversion receiver IC for use in 3G WCDMA mobile cellular systems has been completed and measured. The design includes a bypassable LNA, a quadrature downconverter, and variable gain baseband amplifiers integrated on chip. The static sensitivity performance of the receiver IC is characterized using a software baseband processor to compute link bit-error rate.
Keywords :
Ge-Si alloys; UHF integrated circuits; cellular radio; code division multiple access; radio receivers; semiconductor materials; system-on-chip; 14.5 mA; 2.7 V; 3G WCDMA mobile cellular systems; SiGe; SiGe direct-conversion receiver IC; bypassable LNA; integration on chip; link bit-error rate; quadrature downconverter; static sensitivity performance; variable gain baseband amplifiers; Attenuation; Baseband; Filters; Gain; Germanium silicon alloys; Multiaccess communication; Noise measurement; Receivers; Silicon germanium; System performance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042887
