Title :
Phase noise analysis of fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs
Author :
Lie, D.Y.C. ; Yuan, X. ; Larson, L.E. ; Robinson, T. ; Senior, A. ; Mecke, J. ; Wang, X.
Abstract :
A 3.4-4.6 GHz fully monolithic voltage-controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise: (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved with a combination of coarse tuning via digital selection of MOSCAPs and analog fine-tuning using P-N junction varactors. Approximately 7-10 dB phase noise degradation at 3 MHz offset is observed as the oscillator is digitally switched from the lowest frequency band to the highest band. The role substrate parasitics play on the behavior of phase noise during digital switching is clarified.
Keywords :
BiCMOS analogue integrated circuits; BiCMOS digital integrated circuits; Ge-Si alloys; MOS capacitors; elemental semiconductors; integrated circuit noise; microwave integrated circuits; microwave oscillators; phase noise; semiconductor materials; silicon; varactors; voltage-controlled oscillators; 3.4 to 4.6 GHz; 7 to 10 dB; MOSCAPs; P-N junction varactors; Si-SiGe; analog fine tuning; coarse tuning; digital selection; digital switching; fully monolithic Voltage-Controlled Oscillator; fully-integrated digitally-tuned wideband Si/SiGe BiCMOS VCOs; low-phase noise; lowest frequency band; phase noise; phase noise analysis; phase noise degradation; silicon germanium BiCMOS technology; substrate parasitics; tuning range; BiCMOS integrated circuits; Germanium silicon alloys; Manufacturing; P-n junctions; Phase noise; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042888
