DocumentCode :
2385204
Title :
The effect of non-saturated electron drift velocity on bipolar device linearity
Author :
de Vreede, L.C.N. ; de Graaff, H.C. ; Rejeai, B.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
fYear :
2002
fDate :
2002
Firstpage :
88
Lastpage :
91
Abstract :
In (H)BJT devices, non-saturated electron drift velocity yields base-collector depletion charge variations which depend on the electric field distribution in the collector. It is demonstrated that these inherently non-linear charge variations limit transistor linearity at higher currents. Consequently, by considering the related partial derivatives (Cbc & τcol) for different νdrift (Efield) dependencies, conclusions with respect to device linearity can be made for various material systems.
Keywords :
Ge-Si alloys; III-V semiconductors; bipolar transistors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; BJT devices; GaAs; HBJT devices; SiGe; base-collector depletion charge variations; bipolar device linearity; electric field distribution; nonsaturated electron drift velocity; transistor linearity; Capacitance; Conducting materials; Doping profiles; Electron mobility; Electronic components; Gallium arsenide; Laboratories; Linearity; Poisson equations; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN :
1088-9299
Print_ISBN :
0-7803-7561-0
Type :
conf
DOI :
10.1109/BIPOL.2002.1042893
Filename :
1042893
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2385204
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