DocumentCode :
2385235
Title :
Electromagnetic modeling of non-uniform through-silicon via (TSV) interconnections
Author :
Xie, Biancun ; Swaminathan, Madhavan
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
fDate :
13-16 May 2012
Firstpage :
43
Lastpage :
46
Abstract :
In this paper, a hybrid approach for electromagnetic modeling of complex tapered through-silicon via (TSV) in three dimensional integrated circuits (3D ICs) is proposed. For complex TSV structures, TSVs are divided vertically into conical and cylindrical sections. The modeling of conical TSV is presented based on using conical modal basis functions. By using the conical TSV modeling method combined with cylindrical TSV modeling method, complex TSV structures can be modeled efficiently. The accuracy of this hybrid method is validated by comparison with 3-D full-wave simulations.
Keywords :
integrated circuit modelling; three-dimensional integrated circuits; 3-D full-wave simulations; conical modal basis functions; cylindrical sections; electromagnetic modeling; hybrid approach; nonuniform through-silicon via interconnections; Computational modeling; Semiconductor device modeling; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal and Power Integrity (SPI), 2012 IEEE 16th Workshop on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4673-1503-6
Type :
conf
DOI :
10.1109/SaPIW.2012.6222908
Filename :
6222908
Link To Document :
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