Title :
Device mismatch in BiCMOS technologies
Author :
Drennan, Patrick G.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
Device mismatch is fundamental to precision analog design. However, the geometric and bias dependency is often misunderstood and simplistic models lead to overdesign. This paper provides an overview of the physical basis behind mismatch for devices used in BiCMOS technologies. This model is then used to demonstrate some non-obvious effects in circuit application.
Keywords :
BiCMOS integrated circuits; MOSFET; bipolar transistors; integrated circuit modelling; BJT; BiCMOS technologies; MOSFET; device mismatch; electrical parameters; geometric dependencies; process parameters; statistical parameter variations; Analog circuits; BiCMOS integrated circuits; Circuit topology; Feedback; Geometry; Mirrors; Photonic band gap; Robustness; Solid modeling; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042897
