DocumentCode
2385288
Title
HICUM/Level0 - a simplified compact bipolar transistor model
Author
Schroter, M. ; Lehmann, S. ; Jiang, H. ; Komarow, S.
Author_Institution
Dept. of Electron Devices & Integrated Circuits, Dresden Univ. of Technol., Germany
fYear
2002
fDate
2002
Firstpage
112
Lastpage
115
Abstract
A simple compact bipolar transistor model is presented, combining the simplicity of the SPICE Gummel-Poon model (SGPM) with major features of HICUM. Experimental results are shown for a 150 GHz SiGe BiCMOS process.
Keywords
BiCMOS integrated circuits; bipolar transistors; integrated circuit modelling; semiconductor device models; 150 GHz; BiCMOS process; HICUM model; SPICE Gummel-Poon model; SiGe; compact bipolar transistor model; large-signal equivalent circuit; BiCMOS integrated circuits; Bipolar transistors; Circuit synthesis; Computational geometry; Equations; Equivalent circuits; Integrated circuit modeling; Parameter extraction; Parasitic capacitance; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042898
Filename
1042898
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