Title :
HICUM parameter extraction methodology for a single transistor geometry
Author :
Berger, D. ; Céll, D. ; Schroter, Michael ; Malorn, M. ; Zimmer, T. ; Ardouin, B.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents an accurate and efficient extraction methodology for the main parameters of the bipolar compact model HICUM. The proposed flow was successfully applied to several transistors fabricated with various advanced SiGe BiCMOS technologies.
Keywords :
BiCMOS integrated circuits; bipolar transistors; semiconductor device models; HICUM parameter extraction methodology; SiGe; advanced BiCMOS technologies; bipolar compact model; multi-geometry approach; single transistor geometry; BiCMOS integrated circuits; Current density; Equations; Geometry; Germanium silicon alloys; Integrated circuit modeling; Parameter extraction; Robustness; Silicon germanium; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042899
