DocumentCode :
2385478
Title :
An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter
Author :
Martinet, B. ; Romagna, F. ; Kermarrec, O. ; Campidelli, Y. ; Saguin, F. ; Baudry, H. ; Marty, M. ; Dutartre, D. ; Chantre, A.
Author_Institution :
Centre Commun de Microelectronique de Crolles, ST Microelectron., Crolles, France
fYear :
2002
fDate :
2002
Firstpage :
147
Lastpage :
150
Abstract :
We describe the fabrication and characterization of high speed SiGe:C HBTs using a poly-SiGe emitter. The effects of Ge incorporation into the emitter on the static (gain, BVCEO) and dynamic (fT, τECO) device characteristics are analyzed. This experiment is used to quantify the impact of the current gain on fT, and provides an original way to extract the emitter component of the forward transit time.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor materials; SiGe:C; characterization; current gain; dynamic characteristics; emitter component; fabrication; forward transit time; high speed SiGe:C HBTs; poly-SiGe emitter; static characteristics; Degradation; Doping; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Microelectronics; Optical design; Optical fiber communication; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN :
1088-9299
Print_ISBN :
0-7803-7561-0
Type :
conf
DOI :
10.1109/BIPOL.2002.1042906
Filename :
1042906
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2385478
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