An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier

Author

Ma, Zhenqiang ; Mohammadi, Saeed ; Bhattacharya, Pallab ; Katehi, Linda P B ; Alterovitz, S.A. ; Ponchak, George E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2002

fDate

2002

Firstpage

151

Lastpage

154

Abstract

A single-stage X-band MMIC power amplifier incorporating a SiGe/Si power HBT and lumped passive components is reported. The power HBT is characterized by an f_max of 67 GHz and a BV_CBO of more than 24 V. The matching circuits were designed for maximum output power using on-chip spiral inductors and SiO MIM capacitors. Continuous wave measurements were made at 8.4 GHz, under class A operation. The power amplifier demonstrated a linear gain of 8.6 dB, output power at peak efficiency of 22.9 dBm and a saturated output power of 24.8 dBm.

Keywords

Ge-Si alloys; MIM devices; MMIC power amplifiers; bipolar MIMIC; capacitors; elemental semiconductors; heterojunction bipolar transistors; inductors; integrated circuit measurement; power bipolar transistors; semiconductor materials; silicon; 24 V; 67 GHz; 8.4 GHz; 8.6 dB; SiGe-Si; SiGe/Si HBT-based MMIC power amplifier; SiGe/Si power HBT; SiO MIM capacitors; class A operation; continuous wave measurements; linear gain; lumped passive components; matching circuits; maximum output power; on-chip spiral inductors; output power; peak efficiency; power amplifier; saturated output power; single-stage X-band MMIC power amplifier; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; MMICs; Power amplifiers; Power generation; Silicon germanium; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042907

Filename

1042907