Title :
A universal structure for SRAM cell characterization
Author :
Deng, Xiaowei ; Houston, Theodore W. ; Duong, Anhkim ; Loh, Wah Kit
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A universal test structure (UTS) for SRAM cell characterization is proposed and implemented in 65nm - 28nm technologies. The structure allows, for the first time, measurement of nearly all transistor and cell characteristics of an SRAM cell on silicon. It hence enables direct correlation among various measured transistor and cell characteristics, collection of intra-bit transistor mismatch data, and assessment of wafer level Vmin sensitivity on transistor characteristics. Measured data are presented.
Keywords :
SRAM chips; sensitivity analysis; silicon; transistors; SRAM cell characterization; cell characteristics; silicon; transistor characteristics; universal test structure; wafer level Vmin sensitivity assessment; CMOS technology; Driver circuits; MOSFETs; Microelectronics; Random access memory; Silicon; Testing; Time measurement; Variable structure systems; Voltage;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466815
