Title :
Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits
Author :
Vashchenko, V. ; Concannon, A. ; Beek, M. Ter ; Hopper, P.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Triggering structures BJT, SCR and bi-directional SCR for high voltage BiCMOS process onchip ESD protection have been developed and analyzed using physical process and device simulation and pulse measurements. A ten-fold increase in the protection levels compared to the reference BJT structures have been demonstrated using a cylindrical lateral SCR and bidirectional SCR.
Keywords :
BiCMOS integrated circuits; bipolar transistors; electrostatic discharge; protection; semiconductor process modelling; thyristors; ESD protection capability; bidirectional. SCR; cylindrical lateral SCR; device simulation; high voltage BiCMOS circuits; lateral BJT; on chip protection; process simulation; pulse measurements; triggering structures; BiCMOS integrated circuits; Bidirectional control; Bismuth; Circuit simulation; Conductivity; Electrostatic discharge; Protection; System-on-a-chip; Thyristors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042913
