Title :
Global parameter extraction for a multi-gate MOSFETs compact model
Author :
Yao, Shijing ; Morshed, Tanvir H. ; Lu, Darsen D. ; Venugopalan, Sriramkumar ; Xiong, Weize ; Cleavelin, C.R. ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A global I-V parameter extraction methodology for multi-gate MOSFET compact model is presented for the first time. New L-dependent properties are proposed to enable the accurate modeling of transistors over a wide range of gate length using a single set of model parameters. The results are verified with FinFET experimental data with effective channel lengths from 30nm to 10um. For both n and p type devices, excellent agreement between the data and the model has been demonstrated.
Keywords :
MOSFET; semiconductor device models; FinFET; L-dependent properties; channel lengths; gate length; global I-V parameter extraction; multigate MOSFET compact model; Circuits; Data mining; Degradation; Equations; Length measurement; MOSFETs; Parameter extraction; Parasitic capacitance; Surface resistance; USA Councils; BSIM-CMG; global extraction; multi-gate;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466821
