Title :
A CMOS-based RF SiGe BiCMOS technology featuring over-100 GHz fmax SiGe HBTs and 0.13 μm CMOS
Author :
Hashimoto, T. ; Tanomura, M. ; Fujii, H. ; Sato, F. ; Aoyama, T. ; Suzuki, H. ; Yoshida, H. ; Yamazaki, T.
Author_Institution :
ULSI Device Dev. Div., NEC Corp., Kanagawa, Japan
Abstract :
This paper presents a 86 GHz fT, 105 GHz fmax BiCMOS technology without compromising 0.13 μm gate length CMOS characteristics. This SiGe BiCMOS technology can be realized without adopting any bipolar-oriented process such as collector epitaxial growth and deep trench isolation (DTI). The following are the features of this technology: (1) a tungsten plug trench collector sink is used to reduce the collector resistance of the epi-free collector; (2) base and emitter profiles are optimized for the simultaneous RTA treatment for both emitter drive-in and CMOS S/D annealing; (3) SiGe HBTs are fabricated using our original double-poly self-aligned technology using selective epitaxial SiGe growth.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; annealing; epitaxial growth; heterojunction bipolar transistors; microwave integrated circuits; rapid thermal annealing; semiconductor materials; 0.13 μm gate length CMOS characteristics; 0.13 micron; 100 GHz; 105 GHz; 86 GHz; CMOS S/D annealing; HBT; RF BiCMOS technology; SiGe; W plug trench collector sink; base profile; collector resistance; double-poly self-aligned technology; emitter drive-in annealing; emitter profile; epi-free collector; selective epitaxial growth; simultaneous RTA treatment; BiCMOS integrated circuits; CMOS technology; Diffusion tensor imaging; Epitaxial growth; Germanium silicon alloys; Isolation technology; Plugs; Radio frequency; Silicon germanium; Tungsten;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042915
