Title :
Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications
Author :
John, Jay P. ; Chai, Francis ; Morgan, Dave ; Keller, Theresa ; Kirchgessner, Jim ; Reuter, Ralf ; Rueda, Heman ; Teplik, Jim ; White, Jan ; Wipf, Sandy ; Zupac, Dragan
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola´s 0.35 μm and 0.18 μm BiCMOS technologies. Cutoff frequencies (fT) have been improved from 50 GHz to 78/84 GHz (0.35/0.18 μm BiCMOS), with a reduction in minimum noise figure (NF) from 0.7 dB to 0.30 dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsic collector resistance, and device layout.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; optimisation; semiconductor device noise; semiconductor materials; 0.18 micron; 0.35 micron; 0.7 to 0.30 dB; 50 to 84 GHz; BiCMOS technology; HBT; Motorola; RF/IF applications; SiGe:C; cutoff frequency; device layout; extrinsic collector resistance; intrinsic base dopant profile; intrinsic collector dopant profile; low power wireless applications; minimum noise figure; optimization; performance enhancement; BiCMOS integrated circuits; CMOS technology; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Laboratories; Manufacturing; Noise figure; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042916
