Title :
High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications
Author :
Feilchenfeld, N. ; Lanzerotti, L. ; Sheridan, D. ; Wuthrich, R. ; Geiss, P. ; Coolbaugh, D. ; Gray, P. ; He, J. ; Demag, P. ; Greco, J. ; Larsen, T. ; Patel, V. ; Zierak, M. ; Hodge, W. ; Rascoe, J. ; Trappasso, J. ; Orner, B. ; Norris, A. ; Hershberger,
Author_Institution :
IBM Microeletronics Div., Essex Junction, VT, USA
Abstract :
High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 μm SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving Ft/Fmax of 60/85 GHz with a 3.0 V BVCEO. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave integrated circuits; semiconductor device breakdown; semiconductor materials; 0.18 micron; 3.0 V; 60 to 85 GHz; BiCMOS technology; HBT; SiGe; breakdown voltage; high frequency performance; low current density; low power wireless applications; low wafer cost; Aluminum; Application specific integrated circuits; BiCMOS integrated circuits; Costs; Current density; Electric breakdown; Germanium silicon alloys; Isolation technology; Silicon germanium; Wiring;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042917
