High performance, low complexity 0.18 μm SiGe BiCMOS technology for wireless circuit applications

Author

Feilchenfeld, N. ; Lanzerotti, L. ; Sheridan, D. ; Wuthrich, R. ; Geiss, P. ; Coolbaugh, D. ; Gray, P. ; He, J. ; Demag, P. ; Greco, J. ; Larsen, T. ; Patel, V. ; Zierak, M. ; Hodge, W. ; Rascoe, J. ; Trappasso, J. ; Orner, B. ; Norris, A. ; Hershberger,

Author_Institution

IBM Microeletronics Div., Essex Junction, VT, USA

fYear

2002

fDate

2002

Firstpage

197

Lastpage

200

Abstract

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 μm SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F_t/F_max of 60/85 GHz with a 3.0 V BV_CEO. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave integrated circuits; semiconductor device breakdown; semiconductor materials; 0.18 micron; 3.0 V; 60 to 85 GHz; BiCMOS technology; HBT; SiGe; breakdown voltage; high frequency performance; low current density; low power wireless applications; low wafer cost; Aluminum; Application specific integrated circuits; BiCMOS integrated circuits; Costs; Current density; Electric breakdown; Germanium silicon alloys; Isolation technology; Silicon germanium; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042917

Filename

1042917