DocumentCode :
2385665
Title :
Methodology to evaluate long channel matching deterioration and effects of transistor segmentation on MOSFET matching
Author :
Tuinhout, Hans ; Wils, Nicole ; Meijer, Maurice ; Andricciola, Pietro
Author_Institution :
NXP Semicond. Central R&D / Res., Eindhoven, Netherlands
fYear :
2010
fDate :
22-25 March 2010
Firstpage :
176
Lastpage :
181
Abstract :
This paper summarizes an experimental study on matching of long NMOS transistors and the effects of splitting-up long transistors into series of short transistors. For this purpose, a dedicated set of matched pair test structures were designed and manufactured in a 45 nm CMOS technology. This study is used to evaluate relative threshold voltage matching performance degradations that are observed for long channel devices in such technologies.
Keywords :
CMOS integrated circuits; MOSFET; CMOS technology; MOSFET matching; long NMOS transistors; long channel devices; long channel matching deterioration; matched pair test structures; relative threshold voltage matching performance degradations; short transistors; transistor segmentation; CMOS technology; Circuit testing; Electrostatic discharge; Fluctuations; Implants; MOSFET circuits; Microelectronics; Protection; Space technology; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
Type :
conf
DOI :
10.1109/ICMTS.2010.5466824
Filename :
5466824
Link To Document :
بازگشت