Title :
QUBiC4G: a fT/fmax = 70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz
Author :
Deixler, P. ; Colclaser, R. ; Bower, D. ; Bell, N. ; De Boer, W. ; Szmyd, D. ; Bardy, S. ; Wilbanks, W. ; Barre, P. ; Houdt, M.V. ; Paasschens, J.C.J. ; Veenstra, H. ; Heijden, E. V d ; Donkers, J.J.T.M. ; Slotboom, J.W.
Author_Institution :
Philips Semicond., Hopewell Junction, NY, USA
Abstract :
QUBiC4G is a robust very low-power SiGe RF-BiCMOS technology for emerging wireless and optical networking with NPN fT/fmax up to 70/100 GHz and BVceo = 2.7 V, excellent substrate isolation, 0.25 μm CMOS, full suite of high quality passives, 5 metal layers and an advanced design flow. We present a 12.5 Gb/s optical networking crosspoint switch and a low-noise 20 GHz LC-VCO.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistor switches; electronic switching systems; microwave integrated circuits; microwave switches; semiconductor materials; voltage-controlled oscillators; 0.25 μm CMOS; 0.25 micron; 2.7 V; 20 GHz; 70 to 100 GHz; QUBiC4G; SiGe; advanced design flow; emerging wireless applications; high quality passives; low power RF BiCMOS production technology; low-noise 20 GHz LC-VCO; metal layers; optical networking applications; optical networking crosspoint switch; substrate isolation; BiCMOS integrated circuits; CMOS technology; High speed optical techniques; Isolation technology; Optical fiber networks; Production; Radio frequency; Robustness; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042918
