An integrated SiGe transmitter circuit for 24 GHz radar sensors

Author

Wennekers, P. ; Ghazionour, A. ; Reuter, R.

Author_Institution

Semicond. Product Sector, Motorola Inc., Berlin, Germany

fYear

2002

fDate

2002

Firstpage

212

Lastpage

215

Abstract

The design of an integrated transmitter circuit is described, which operates in the 24 GHz band. The circuit is comprised of a VCO, which delivers 18 mW power at 50 ohm, a frequency divider chain and an additional RF output to drive the LO-input of a receiver chip in a 24 GHz FM-CW radar system. SiGe-HBTs with typical F_t=48 GHz/F_max=80 GHz and V_CEO >3.2 V of a production SiGe-BiCMOS process are used as active devices. All resonators and matching circuits are implemented on chip by using the 4-layer dielectric/metal (AlCu) stack of the process.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; microwave integrated circuits; radar transmitters; semiconductor materials; voltage-controlled oscillators; 18 mW; 24 GHz; 24 GHz FM-CW radar system; 4-layer dielectric/(AlCu) stack; AlCu; BiCMOS process; HBT; SiGe; VCO; active devices; additional RF output; frequency divider chain; integrated transmitter circuit; radar sensors; receiver chip LO-input; Circuits; Dielectrics; Frequency conversion; Germanium silicon alloys; Production; Radar; Radio frequency; Silicon germanium; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042920

Filename

1042920