DocumentCode
2385751
Title
30 GHz monolithic voltage-controlled oscillator with dual-modulus prescaler in SiGe bipolar technology
Author
Ritzberger, Günter ; Knapp, Herbert ; Böck, Josef ; Aufinger, Klaus
Author_Institution
Infineon Technol., Munich, Germany
fYear
2002
fDate
2002
Firstpage
220
Lastpage
223
Abstract
This paper presents an integrated circuit suitable for frequency synthesis. The circuit consists of a monolithic voltage-controlled oscillator operating up to 30.5 GHz with static divide-by-256/divide-by-257 dual-modulus prescaler and consumes 500 mW from the 5.3 V supply. It is manufactured in a pre-production 0.4 μm/85 GHz SiGe bipolar technology.
Keywords
Ge-Si alloys; bipolar MMIC; frequency dividers; frequency synthesizers; prescalers; semiconductor materials; voltage-controlled oscillators; 0.4 micron; 24 to 30 GHz; 30 GHz monolithic voltage-controlled oscillator; 30.5 GHz; 5.3 V; 500 mW; 85 GHz; SiGe; frequency synthesis; integrated circuit; pre-production 0.4 μm/85 GHz bipolar technology; static divide-by-256/divide-by-257 dual-modulus prescaler; Circuit optimization; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Integrated circuit synthesis; Integrated circuit technology; Master-slave; Silicon germanium; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042922
Filename
1042922
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