Title :
Correlation between Direct Charge Measurement (DCM) and LCR meter on deep submicron CMOS test structure capacitance measurement
Author :
Miyake, Yasuhiro ; Goto, Masaharu ; Fujii, Shunsuke ; Nishimura, Hidetoshi
Author_Institution :
Agilent Technol. Int. Japan, Ltd., Japan
Abstract :
This paper reports capacitance measurement correlation between Direct Charge Measurement (DCM) and conventional LCR meter on 0.18um CMOS test structure. Measurement results of interconnect and MOSCAP test structures are presented. Mathematical analysis shows that DCM and LCR meter results correlate very well for MOSCAP as well. Amplitude Adjustment Method and Amplitude Extrapolation Methods are proposed to calibrate nonlinear C-V measurement errors. Theoretical discussion can also be applied to Charge-Based Capacitance Measurement (CBCM) because it uses similar stimulus.
Keywords :
CMOS integrated circuits; capacitance measurement; charge measurement; extrapolation; integrated circuit interconnections; integrated circuit testing; mathematical analysis; LCR meter; MOSCAP test structures; amplitude adjustment method; amplitude extrapolation methods; charge-based capacitance measurement; deep submicron CMOS test structure capacitance measurement; direct charge measurement; interconnect; mathematical analysis; nonlinear C-V measurement error calibration; size 0.18 mum; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Charge measurement; Chromium; Current measurement; Operational amplifiers; Testing; Throughput; Voltage; CBCM; Capacitance measurement; Direct Charge Measurement; LCR meter; MOSCAP;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466830
