Title :
A novel optical effect in InGaP compound collector heterojunction bipolar transistors
Author :
Zampardi, P.J. ; Pierson, R.L.
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA, USA
Abstract :
In this paper, we report the observation of a novel optical interaction that occurs in compound collector heterojunction bipolar transistors (CCHBT). This interaction causes an increase in the collector current, due to optical biasing, that can also be used to monitor the thickness of the InGaP layer in the CCHBT collector. We demonstrate this effect by examining I-V curves and C-V curves with and without illumination.
Keywords :
electro-optical effects; gallium compounds; heterojunction bipolar transistors; indium compounds; C-V curves; HBT; I-V curves; InGaP; InGaP compound collector heterojunction bipolar transistors; collector current; optical biasing; optical effect; Current measurement; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Lamps; Monitoring; Optical materials; Optical microscopy; Performance evaluation; USA Councils; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042925
