DocumentCode
2385827
Title
A novel optical effect in InGaP compound collector heterojunction bipolar transistors
Author
Zampardi, P.J. ; Pierson, R.L.
Author_Institution
Skyworks Solutions Inc., Newbury Park, CA, USA
fYear
2002
fDate
2002
Firstpage
232
Lastpage
235
Abstract
In this paper, we report the observation of a novel optical interaction that occurs in compound collector heterojunction bipolar transistors (CCHBT). This interaction causes an increase in the collector current, due to optical biasing, that can also be used to monitor the thickness of the InGaP layer in the CCHBT collector. We demonstrate this effect by examining I-V curves and C-V curves with and without illumination.
Keywords
electro-optical effects; gallium compounds; heterojunction bipolar transistors; indium compounds; C-V curves; HBT; I-V curves; InGaP; InGaP compound collector heterojunction bipolar transistors; collector current; optical biasing; optical effect; Current measurement; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Lamps; Monitoring; Optical materials; Optical microscopy; Performance evaluation; USA Councils; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042925
Filename
1042925
Link To Document