• DocumentCode
    2385846
  • Title

    A high-injection transit-time model for heterojunction barrier effects in SiGe HBTs

  • Author

    Liang, Qingqing ; Cressler, John D. ; Guofu Niu ; Malladi, Ramana M. ; Newton, Kim ; Harame, David L.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Tech., Atlanta, GA, USA
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    236
  • Lastpage
    238
  • Abstract
    A physics-based fT model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. It accurately captures fT behavior at high JC, and offers better insight into the Kirk and barrier effect In SiGe HBTs.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; high field effects; semiconductor device models; Kirk effect; SiGe; SiGe HBTs; heterojunction barrier effects; high-injection transit-time model; Electronic mail; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Kirk field collapse effect; Microelectronics; Microwave frequencies; Physics computing; Radio frequency; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042926
  • Filename
    1042926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2385846