DocumentCode :
2385950
Title :
Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs
Author :
Fukutome, H. ; Momiyama, Y. ; Kubo, T. ; Yoshida, E. ; Morioka, H. ; Tajima, M. ; Aoyama, T.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
We have investigated what effects randomly oriented and rotated poly-Si gate grains have on lateral carrier profiles in sub-50-nm MOSFETs by direct observations and electrical measurements. Since amorphous gates suppress random channeling penetration of pocket implants, we have increased effective mobility (40%), improved Vth roll-off characteristic (7 nm) and decreased Vth fluctuation (-26%)
Keywords :
MOSFET; elemental semiconductors; silicon; 50 nm; MOSFET; Si; amorphous gate; electrical measurements; lateral carrier profiles; pocket implants; poly-Si gate grains; poly-gate-induced fluctuations; random channeling penetration; Amorphous materials; Electric variables; Electric variables measurement; Electrodes; FETs; Fluctuations; Implants; MOSFETs; Rotation measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346762
Filename :
4154181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2385950
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