Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies

Author

Amusan, O.A. ; Bhuva, B.L. ; Casey, M.C. ; Gadlage, M.J. ; McMorrow, D. ; Melinger, J.S. ; Massengill, L.W.

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

fYear

2010

fDate

22-25 March 2010

Firstpage

114

Lastpage

117

Abstract

A novel on-chip test circuit to measure single-event-induced charge sharing has been developed and implemented in an IBM 90 nm process. Test measurements with Two-Photon Absorption (TPA) backside laser irradiation helps demonstrate the effectiveness of the test circuit in characterizing charge sharing effects for sub-100 nm bulk CMOS processes.

Keywords

CMOS integrated circuits; integrated circuit testing; laser beam applications; two-photon spectra; IBM process; bulk CMOS processes; deep-submicron technologies; on-chip test circuit; single-event-induced charge sharing; size 90 nm; two-photon absorption backside laser irradiation; Absorption; CMOS process; CMOS technology; Charge measurement; Circuit testing; Current measurement; Error analysis; Microelectronics; Particle measurements; Transistors; charge collection; charge sharing; on-chip test circuit; single event circuit characterization; two-photon absorption;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on

Conference_Location

Hiroshima

Print_ISBN

978-1-4244-6912-3

Electronic_ISBN

978-1-4244-6914-7

Type

conf

DOI

10.1109/ICMTS.2010.5466844

Filename

5466844