High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays

Author

Rad, Mohammad R Esmaeili ; Sazonov, Andrei ; Nathan, Arokia

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont.

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm²V^-1s^-1, threshold voltage of 4 V, on/off current ratio about 10⁸ with an off-current of 10^-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V

Keywords

LED displays; amorphous semiconductors; elemental semiconductors; organic light emitting diodes; plasma CVD; silicon; thin film transistors; 15 V; 280 C; 4 V; AMOLED displays; bias stress measurements; field-effect mobility; hydrogenated amorphous silicon; nanocrystalline silicon bottom gate thin film transistors; plasma-enhanced chemical vapor deposition; Active matrix organic light emitting diodes; Chemical vapor deposition; Plasma chemistry; Plasma displays; Plasma properties; Plasma stability; Silicon; Stress measurement; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346768

Filename

4154187