Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application

Author

Kim, Chang Jung ; Kang, Donghun ; Song, Ihun ; Park, Jae Chul ; Lim, Hyuck ; Kim, Sunil ; Lee, Eunha ; Chung, Ranju ; Lee, Jae Cheol ; Park, Youngsoo

Author_Institution

Semicond. Device & Material Lab., Gyeonggi-Do

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

We, for the first time, have successfully fabricated amorphous Ga ₂O₃-In₂O₃-ZnO thin film transistor (TFT) with excellent electrical properties and good stability under constant current stress. This transistor shows a field effect mobility of 10 cm²/Vs, an off current below 2 pA and a drain current on-to-off ratio of above 10⁸. The threshold voltage shift was less than 0.2 V for 100 hours at 3 muA and 60 degC. Such stable oxide transistors can be utilized as driving transistor for large area OLED display

Keywords

LED displays; amorphous semiconductors; gallium compounds; indium compounds; organic light emitting diodes; zinc compounds; 100 hrs; 3 muA; 60 C; Ga₂O₃-In₂O₃-ZnO; OLED display; active-matrix organic light-emitting diode display; amorphous thin film transistor; constant current stress; driving transistor; electrical properties; field effect mobility; stable oxide transistors; Active matrix organic light emitting diodes; Active matrix technology; Electrodes; Flat panel displays; Organic light emitting diodes; Plasma temperature; Stability; Stress; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346769

Filename

4154188