DocumentCode :
2386077
Title :
Electrical characterization of novel PMNT thin-films
Author :
Chen, Wenbin ; McCarthy, Kevin G. ; Çopuroglu, Mehmet ; O´Brien, Shane ; Winfield, Richard ; Mathewson, Alan
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fYear :
2010
fDate :
22-25 March 2010
Firstpage :
98
Lastpage :
101
Abstract :
This paper presents the systematic investigation by electrical characterization of PMNT (lead magnesium niobate - lead titanate, Pb(Mg0.33Nb0.67)0.65Ti0.35O3) thin-films with different fabrication parameters. The PMNT thin-films are processed under different conditions including annealing at various temperatures. Capacitance-voltage (C-V), current-voltage (I-V), capacitance-frequency (C-F), dissipation factor-frequency (D-F) and complex impedance-frequency (Z-F) measurements are presented.
Keywords :
annealing; high-k dielectric thin films; lead compounds; PMNT thin films; Pb((Mg0.33Nb0.67)0.65Ti0.35O3); annealing; capacitance-frequency; complex impedance-frequency; current-voltage; dissipation factor-frequency; electrical characterization; fabrication parameters; Annealing; Capacitance; Capacitance-voltage characteristics; Fabrication; Lead; Magnesium; Niobium compounds; Temperature; Thin films; Titanium compounds; High-k; PMNT; dielectric constant; dielectric loss tangent; thin-film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
Type :
conf
DOI :
10.1109/ICMTS.2010.5466848
Filename :
5466848
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2386077
بازگشت