Electrical characterization of novel PMNT thin-films

Author

Chen, Wenbin ; McCarthy, Kevin G. ; Çopuroglu, Mehmet ; O´Brien, Shane ; Winfield, Richard ; Mathewson, Alan

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2010

fDate

22-25 March 2010

Firstpage

98

Lastpage

101

Abstract

This paper presents the systematic investigation by electrical characterization of PMNT (lead magnesium niobate - lead titanate, Pb(Mg_0.33Nb_0.67)_0.65Ti_0.35O₃) thin-films with different fabrication parameters. The PMNT thin-films are processed under different conditions including annealing at various temperatures. Capacitance-voltage (C-V), current-voltage (I-V), capacitance-frequency (C-F), dissipation factor-frequency (D-F) and complex impedance-frequency (Z-F) measurements are presented.

Keywords

annealing; high-k dielectric thin films; lead compounds; PMNT thin films; Pb((Mg_0.33Nb_0.67)_0.65Ti_0.35O₃); annealing; capacitance-frequency; complex impedance-frequency; current-voltage; dissipation factor-frequency; electrical characterization; fabrication parameters; Annealing; Capacitance; Capacitance-voltage characteristics; Fabrication; Lead; Magnesium; Niobium compounds; Temperature; Thin films; Titanium compounds; High-k; PMNT; dielectric constant; dielectric loss tangent; thin-film;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on

Conference_Location

Hiroshima

Print_ISBN

978-1-4244-6912-3

Electronic_ISBN

978-1-4244-6914-7

Type

conf

DOI

10.1109/ICMTS.2010.5466848

Filename

5466848