Title :
Investigation on the field leakage current in 0.35μm CMOS technology at high temperature
Author :
Kong, Soon Tat ; Ronald, Paul Stribley ; Lee, Chris
Author_Institution :
X-FAB Semicond. Foundries, Plymouth, UK
Abstract :
For the first time, this paper demonstrates the experimental results for two types of test structures of field transistors up to 200°C. The field transistor structures which are stripe (conventional) and square ring (new) structures were measured and investigated in term of field leakage current and on-state characterization at high temperature.
Keywords :
CMOS integrated circuits; field effect transistors; leakage currents; CMOS technology; field leakage current; field transistor structures; high temperature on-state characterization; size 0.35 mum; square ring structures; stripe structures; Automobiles; CMOS technology; Circuit testing; Consumer electronics; Electronic components; Foundries; Leakage current; MOSFETs; Silicon on insulator technology; Temperature;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466849
