Title :
CMOS and Interconnect Reliability - Bias-Temperature Instability in SiON and High-k Gate Dielectrics
Keywords :
Charge pumps; Degradation; Dielectric substrates; High-K gate dielectrics; Instruments; Life estimation; Lifetime estimation; Niobium compounds; Temperature; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346771
