Title :
Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy
Author :
Vianello, E. ; Nowak, E. ; Mariolle, D. ; Chevalier, N. ; Perniola, L. ; Molas, G. ; Colonna, J.P. ; Driussi, F. ; Selmi, L.
Author_Institution :
DIEGM, Univ. of Udine, Udine, Italy
Abstract :
In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.
Keywords :
charge exchange; microscopy; numerical analysis; silicon compounds; KFM; Kelvin force microscopy; SiN; Trapped Charge Probing; lateral charge transport; three dimensional numerical device simulations; volatile memory cells; Analytical models; Charge carrier processes; Charge measurement; Current measurement; Force measurement; Kelvin; Measurement standards; Microscopy; Numerical simulation; Silicon compounds;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2010 IEEE International Conference on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-6912-3
Electronic_ISBN :
978-1-4244-6914-7
DOI :
10.1109/ICMTS.2010.5466851
